Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
Recent experimental results of InAs quantum wells clad with GaSb are described. It is shown that high quality GaSb is critical to the formation of the electron-hole system. The same results also apply to quantum wells with GaSb ternary alloys, where the densities of carrier can be controlled by varying the alloy composition. © 1989.
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
J.C. Marinace
JES
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films