The DX centre
T.N. Morgan
Semiconductor Science and Technology
A low-temperature (T<4.2 K) transport study of n-type doped (1019 cm-3) bulk GaAs reveals an enhancement of the electrical resistance, R/R10-3, below a critical temperature, Tc=3.4 K, at low magnetic fields, B<30 mT, when superconducting In point contacts are used as the current and voltage probes. The resistance correction is shown to be a homogeneous function of the magnetic field, B, and the reduced temperature, =(Tc-T)/Tc, as [R(T,B)/R]s=Af(B) with =1.00 0.25, and =1.00 0.33, in the vicinity of the critical point. The effect is attributed to proximity superconductivity in GaAs resulting from the use of superconducting point contacts. © 1992 The American Physical Society.
T.N. Morgan
Semiconductor Science and Technology
Imran Nasim, Melanie Weber
SCML 2024
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
A. Krol, C.J. Sher, et al.
Surface Science