Yeqing Lu, Alan C. Seabaugh, et al.
DRC 2010
A general solution for the electrostatic potential in an atomic-thin-body field-effect transistor (ATB-FET) geometry is presented. The effective electrostatic scaling length λeff is extracted from the analytical model, which cannot be approximated by the lowest order eigenmode as traditionally done in SOI-MOSFETs. An empirical equation for the scaling length that depends on the geometry parameters is proposed. It is shown that, even for a thick SiO2 back oxide, λeff can be improved efficiently by a thinner top oxide thickness and, to some extent, with high-kappa; dielectrics. The model is then applied to a self-consistent simulation of graphene nanoribbon (GNR) Schottky-barrier FETs (SB-FETs) at the ballistic limit. In the case of GNR SB-FETs, for a large λeff, the scaling is limited by the conventional electrostatic short-channel effects. On the other hand, for a small λeff, the scaling is limited by direct source-to-drain tunneling. A subthreshold swing below 100 mV/dec is still possible with a sub-10-nm gate length in GNR SB-FETs. © 2006 IEEE.
Yeqing Lu, Alan C. Seabaugh, et al.
DRC 2010
Wan Sik Hwang, Amit Verma, et al.
DRC 2013
Kristof Tahy, Siyuranga Koswatta, et al.
DRC 2009
Pei Zhao, Qin Zhang, et al.
IEEE T-ED