Conference paper
Carrier leakage in 1.3 μm SCH quantum well lasers
S. Hausser, C. Harder, et al.
ISLC 1992
The growth of high-quality GaAs/AlGaAs graded-index separate-confinement heterostructure single-quantum-well diode lasers is shown to be critically dependent on growth temperature. The temperature-dependent nature of oxygen incorporation in the cladding and active regions and its effect on laser performance is investigated in detail. A model is presented that takes the incorporation, desorption, and accumulation of impurities in different regimes into account.
S. Hausser, C. Harder, et al.
ISLC 1992
L.Y. Liu, E. Mendez, et al.
Applied Physics Letters
B.E. Maile, G. Mayer, et al.
Microelectronic Engineering
M. Krahl, N. Kirstaedter, et al.
Journal of Applied Physics