S.J. Bending, A. Peck, et al.
Solid State Electronics
The growth of high-quality GaAs/AlGaAs graded-index separate-confinement heterostructure single-quantum-well diode lasers is shown to be critically dependent on growth temperature. The temperature-dependent nature of oxygen incorporation in the cladding and active regions and its effect on laser performance is investigated in detail. A model is presented that takes the incorporation, desorption, and accumulation of impurities in different regimes into account.
S.J. Bending, A. Peck, et al.
Solid State Electronics
L. Brovelli, D.J. Arent, et al.
ISLC 1990
S. Hausser, C. Harder, et al.
ISLC 1992
C. Harder, P. Buchmann, et al.
Electronics Letters