Conference paper
Photon transport transistor
B.J. Van Zeghbroeck, C. Harder, et al.
IEDM 1989
Using a novel single-step molecular beam epitaxy growth technology on nonplanar substrates, we report on the successful integration of an InGaAs / AlGaAs laser amplifier with a 4-mm-long passive waveguide cavity and a QW modula-tor. Lasing action of the entire structure was achieved by a current of 60 mA flowing through the amplifier section. Mode-locking experiments applying an RF signal to the modulator segment led to nearly transform-limited pulses with a duration of 4.4 ps and a time-bandwidth product of 0.43. © 1993 IEEE.
B.J. Van Zeghbroeck, C. Harder, et al.
IEDM 1989
M. Heiblum, K. Seo, et al.
IEEE T-ED
H. Jaeckel, H.P. Meier, et al.
Applied Physics Letters
P. Muralt, H.P. Meier, et al.
Superlattices and Microstructures