Conference paper
5. 2GHz MONOLITHIC GaAs OPTOELECTRONIC RECEIVER.
B.J. Van Zeghbroeck, C. Harder, et al.
IEDM 1986
The growth terraces in molecular beam epitaxy-grown Al,Ga, -As multilayers are observed on the ultrahigh vacuum cleaved ( 110) cross-sectional plane using scanning tunneling microscopy. Under regular growth conditions on 2 off oriented vicinal surfaces, we observe step bunching of 2-8 atomic layers and a corresponding extension of the terrace length instead of monolayer steps. These results demonstrate that the roughness of quantum confinement layers can be studied down to the atomic scale in a direct way.
B.J. Van Zeghbroeck, C. Harder, et al.
IEDM 1986
Christoph S. Harder, Bart Van Zeghbroeck, et al.
IEEE Electron Device Letters
G. Mayer, B.E. Maile, et al.
Applied Physics Letters
H. Hillmer, A. Forchel, et al.
Physical Review B