K.A. Miller, C. John, et al.
Thin Solid Films
Reflection-absorption infrared spectroscopy has been employed to observe Si-H bonds within a model, ultrathin silicon oxide. Upon heating a monolayer of H 8Si 8O 12/Si(100-2×1 to 700°C, Si-H bonds as a part of HSiO 3 entities are still detected within the oxide layer after cooling. These fragments appear to be stable to temperatures of at least 850°C. Reversible hydrogen/deuterium exchange for these entities is also directly observed. © 2002 American Institute of Physics.
K.A. Miller, C. John, et al.
Thin Solid Films
K.A. Miller, C. John, et al.
Thin Solid Films
K.Z. Zhang, K.E. Litz, et al.
Applied Physics Letters
K.Z. Zhang, M.M. Banaszak Holl, et al.
Journal of Physical Chemistry B