A new model silicon/silicon oxide interface synthesized from H₁₀Si₁₀O₁₅ and Si(100)-2×1

Abstract

A model silicon/silicon oxide interface, synthesized from the spherosiloxane H10Si10O15 and Si(100)-2×1, has been characterized by study of the Si 2p core-levels and valence band region using soft X-ray photoemission. In addition, the intact H10Si10O15 cluster was condensed at - 160°C onto Si(111)-H and characterized. The measured photoemission features are in good agreement with the results of previous model studies.