Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
We present a novel metal gate/high-k complementary metal-oxide-semiconductor (CMOS) integration scheme with symmetric and low threshold voltage (Vth) for both n-channel (nMOSFET) and p-channel (pMOSFET) metal-oxide-semiconductor field-effect transistors. The workfunction of pMOSFET is modulated by oxygen in-diffusion ('oxygenation') through the titanium nitride metal gate without equivalent oxide thickness (EOT) degradation. A significant Vth improvement by 420 mV and an aggressively scaled capacitance equivalent thickness under channel inversion (Tinv) of 1.3 nm is achieved for the pFET by using a replacement process in conjunction with optimized oxygenation process. Immunity of nMOSFET against oxygenation process is demonstrated. © 2009 Elsevier B.V. All rights reserved.
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Mark W. Dowley
Solid State Communications
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters