Kangguo Cheng, A. Khakifirooz, et al.
VLSI Circuits 2011
We present self-consistent solutions of ultrathin body device structures to understand the influence of quantum-mechanical confinement on the predictions of classical scaling theory. We show that two-dimensional (2-D) electrostatics considerations play a more dominant role than quantum-mechanical effects in the subthreshold behavior of ultrathin fully depleted silicon-on-insulator structures. We also show how modifications to the doping profile can be used to alleviate 2-D short-channel effects. © 2005 IEEE.
Kangguo Cheng, A. Khakifirooz, et al.
VLSI Circuits 2011
Arvind Kumar, Steven E. Laux, et al.
Applied Physics Letters
Paul M. Solomon, Steven E. Laux
IEDM 2001
Steven E. Laux
IEEE Transactions on Electron Devices