Polysilane photoresists for 193 and 248 nm lithography

Abstract

A series of sensitizing additives for polysilane bilayer photoresists have been identified. These compounds effectively quench the fluorescence of aromatic polysilanes and greatly increase the rate of photooxidation and spectral bleaching in the solid state. Resists formulated with sensitizers such as phthalimidotriflate show increased photospeed in imaging experiments at both 248 and 193 nm. Characteristics of the resist reactions are described. © 1992, The Society of Photopolymer Science and Technology(SPST). All rights reserved.