Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Pit growth was studied in 80Ni-20Fe sputtered thin films by analysis of images of the growing pits. The pit current density was found to increase with pit growth potential until reaching a limiting value. The limiting current density increased with decreasing film thickness. The mass-transfer resistance to the active pit wall exceeds by an order of magnitude that predicted from a simple radial-diffusion model. It is suggested that the undercut, remnant passive film collapses over the pit wall causing a constriction. A voltage component calculation matches the data rather well and indicates that pit growth below the limiting current density is limited by a combination of ohmic, concentration, and surface activation considerations. © 1992, The Electrochemical Society, Inc. All rights reserved.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
Mark W. Dowley
Solid State Communications
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery