J. Appenzeller, R. Martel, et al.
Microelectronic Engineering
We present a study on the scaling behavior of field-effect transistors in the quantum-capacitance limit (QCL). It will be shown that a significant performance improvement in terms of the power delay product can be obtained in devices scaled toward the QCL. As a result, nanowires or nanotubes exhibiting a 1-D transport are a premier choice as active channel materials for transistor devices since the QCL can be attained in such systems. © 2008 IEEE.
J. Appenzeller, R. Martel, et al.
Microelectronic Engineering
K. Moselund, H. Ghoneim, et al.
DRC 2009
R. Martel, V. Derycke, et al.
Physical Review Letters
J. Knoch, S. Mantl, et al.
Solid-State Electronics