Soft x-ray diffraction of striated muscle
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
We present experimental studies on the performance of ultra-thin body SOI tunnel FETs depending on channel length, gate oxide thickness and source/drain doping concentrations. Electrical measurements show no dependance on channel length, however, a strong dependance on gate oxide thickness and doping concentration is found. Our experimental results match calculations based on a simple Landauer model employing the Wenzel-Kramer-Brillouin approximation for the tunneling process. Bandgap narrowing and the electrostatics of the tunneling junction are found to be the main factors impacting the on-state performance of the tunnel FET. © 2009 Elsevier Ltd. All rights reserved.
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
J.A. Barker, D. Henderson, et al.
Molecular Physics
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron