Frank Stem
C R C Critical Reviews in Solid State Sciences
In this paper, we combine the modified electrostatics of a one-dimensional transistor structure with a quantum kinetic formulation of Coulomb interaction and nonequilibrium transport. A multi-configurational self-consistent Green's function approach is presented, accounting for fluctuating electron numbers. On this basis we provide a theory for the simulation of electronic transport and quantum charging effects in nanotransistors, such as a gated carbon nanotube and whisker devices and one-dimensional CMOS transistors. Single-electron charging effects arise naturally as a consequence of the Coulomb repulsion within the channel. © 2005 The American Physical Society.
Frank Stem
C R C Critical Reviews in Solid State Sciences
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
R. Ghez, J.S. Lew
Journal of Crystal Growth
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films