R. Ghez, M.B. Small
JES
In this paper, we combine the modified electrostatics of a one-dimensional transistor structure with a quantum kinetic formulation of Coulomb interaction and nonequilibrium transport. A multi-configurational self-consistent Green's function approach is presented, accounting for fluctuating electron numbers. On this basis we provide a theory for the simulation of electronic transport and quantum charging effects in nanotransistors, such as a gated carbon nanotube and whisker devices and one-dimensional CMOS transistors. Single-electron charging effects arise naturally as a consequence of the Coulomb repulsion within the channel. © 2005 The American Physical Society.
R. Ghez, M.B. Small
JES
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
John G. Long, Peter C. Searson, et al.
JES
Ronald Troutman
Synthetic Metals