F.A. Houle, W.D. Hinsberg, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Product translational energy distributions have been used in previous studies as a diagnostic of surface reaction enhancement mechanisms under ion bombardment. Haring and co-workers [R. A. Haring, A. Haring, F. W. Saris, and A. E. de Vries, Appl. Phys. Lett. 41, 174 (1982)] have taken an E-2 dependence for SiFx species desorbing during ion-enhanced etching of silicon as evidence for the importance of physical sputtering. In this work, the translational energy distribution of SiF 4 desorbing from the surface of silicon during spontaneous etching by XeF2 has been obtained from modulated beam measurements. The distribution deviates markedly from a thermal distribution at the surface temperature and exhibits an E-2 dependence at high energy. Observation of this energy dependence both with and without ions suggests that translational energy distributions may not provide a unique signature for chemical and physical sputtering.
F.A. Houle, W.D. Hinsberg, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
J. Hoffnagle, W.D. Hinsberg, et al.
Optics Letters
M.I. Sanchez, W.D. Hinsberg, et al.
SPIE Advances in Resist Technology and Processing 1999
F.A. Houle, W.D. Hinsberg
Journal of Physical Chemistry