G.M. Wallraff, John M. Hutchinson, et al.
Microelectronic Engineering
By analysis of the response of a high-contrast photoresist to sinusoidal illumination, generated interferometrically, one can extract a phenomenological modulation transfer function of the resist material, thereby characterizing its spatial resolution. Deep-ultraviolet interferometric lithography allows the resist response to be quantified at length scales below 100 nm. As an example, the resolution (FWHM) of the commercial resist UVII-HS is found to be approximately 50 nm. This simple method can be applied to materials under development for advanced photolithography with short-wavelength illumination. © 2002 Optical Society of America.
G.M. Wallraff, John M. Hutchinson, et al.
Microelectronic Engineering
R.J. Twieg, K. Betterton, et al.
Ferroelectrics
G.M. Wallraff, W.D. Hinsberg, et al.
SPIE Advances in Resist Technology and Processing 1999
K.R. Carter, H.J. Cha, et al.
MRS Spring Meeting 1995