Z.A. Weinberg, M.V. Fischetti
Journal of Applied Physics
The calculation of electron mobility in strained-silicon inversion layers accounting for scattering with phonons and interface roughness was studied. The strong carrier confinement in inversion layers removed the sixfold degeneracy of the conduction-band minima. The momentum relaxation rates relative to intravalley scattering with acoustic phonons were treated using the anisotropic model.
Z.A. Weinberg, M.V. Fischetti
Journal of Applied Physics
M.V. Fischetti, S.E. Laux, et al.
SISPAD 2005
Wai Lee, S.E. Laux, et al.
IEDM 1989
S.E. Laux, M.V. Fischetti
IEDM 1997