Conference paperElectrical integrity of state-of-the-art 0.13 μm SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabricationK.W. Guarini, A. Topol, et al.IEDM 2002
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Conference paperSimulation of quantum transport in small semiconductor devicesM.V. Fischetti, S.E. Laux, et al.SISPAD 2005
Conference paperAn n-FET with a Si nanowire channel and doped epitaxially-thickened source and drain regionsG.M. Cohen, P. Solomon, et al.DRC 2007