Conference paperAggressively scaled (0.143 μm 2) 6T-SRAM cell for the 32 nm node and beyondD. Fried, J. Hergenrother, et al.IEDM 2004
Conference paperMonte Carlo simulation of electron transport in Si: The first 20 yearsM.V. Fischetti, S.E. LauxESSDERC 1996
Conference paperSimulation of quantum electronic transport in small devices: A Master equation approachM.V. Fischetti, S.E. Laux, et al.IEDM 2003
Conference paperQDAME simulation of 7.5 nm double-gate Si nFETs with differing access geometriesS.E. Laux, A. Kumar, et al.IEDM 2002
