W.P. Dumke, J. Woodall, et al.
Solid-State Electronics
Quasimonoenergetic ballistic electrons were injected into GaAs potential wells of various thicknesses (2972 nm). Strong modulation in the injected currents, as a function of the injection energy, was observed and correlated with electron coherence effects. A self-consistent solution of Poisson and Schrödinger equations was needed to relate these effects to the bound and, in particular, resonant quantum states in the well. The good match with theory justified the use (and led to an expression) of the electron energy effective mass in the central valley, in an energy range where nonparabolicity and valley transfer are significant and make this determination, usually, difficult. © 1987 The American Physical Society.
W.P. Dumke, J. Woodall, et al.
Solid-State Electronics
M. Heiblum, D.C. Thomas, et al.
Surface Science
M.V. Fischetti, Z.A. Weinberg, et al.
Journal of Applied Physics
M. Heiblum
IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits 1984