C.T. Chuang, R.M. White
IEEE Electron Device Letters
A nonquasi-static (NQS) model accounting for intrinsic carrier propagation delays in both B/E and B/C junctions is implemented in the ASTAP circuit simulator to evaluate the impact of non-quasi-static effects in saturated bipolar circuits. It is shown that while the extra delay introduced by the NQS effects during the turn-on transition is primarily due to the normal mode B/E NQS delay time, the more severe NQS delay in the turnoff transition is caused mainly by the removal of the saturation overdrive charges and the longer inverse mode B/C NQS delay time. © 1994 IEEE.
C.T. Chuang, R.M. White
IEEE Electron Device Letters
S.K.H. Fung, N. Zamdmer, et al.
IEDM 2000
K. Kim, K. Das, et al.
International Journal of Electronics
R. Puri, C.T. Chuang
VLSID 2000