NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor

Abstract

We report a thorough study of the negative bias temperature instability (NBTI) reliability in stacked gate-all-around (GAA) nanosheet (NS) devices with (100) and (110) top surfaces. We demonstrated that NBTI stresses not only create more permanent defects in (110) than (100) surface due to higher density of Si-H bond but also induce more recoverable damages. Finally, we show that NBTI deteriorates at narrow sheet width in (100) NS but is width independent in (110) NS.