NITROGEN ISOELECTRONIC TRAP IN GaAs.
D.J. Wolford, J.A. Bradley, et al.
ICDS 1984
A detailed study of near-gap photoluminescence (PL) from strained Si 1-xGex alloy layers (x=0.01-0.05) and Si/Si 0.95Ge0.05 multiquantum-wells (MQWs) has failed to show either free or dopant-bound excitons in as-prepared molecular beam epitaxial (MBE) layers. Low-temperature PL was, however, successfully induced in these same heterostructures by the selective introduction of relatively shallow (137 and 186 meV) radiation-damage bound-exciton centers, I1 and G, (respectively). The I1 center, in particular, produced alloy-broadened spectra which are shown clearly to emanate from the epitaxial layers, with separate and distinguishable components originating from both Si and Si1-xGex (x=0.01-0.05). This is among the first such reports of luminescence verifiably originating from within a Si/Si 1-xGex multiple heterostructure.
D.J. Wolford, J.A. Bradley, et al.
ICDS 1984
D.J. Wolford, J.A. Bradley
Solid State Communications
M.S. Goorsky, Subramanian S. Iyer, et al.
Applied Physics Letters
Alex Harwit, P.R. Pukite, et al.
Thin Solid Films