Reliability qualification of CoSI₂ electrical fuse for 90NM technology

Abstract

The reliability of CoSi2/p-poly Si electrical fuse (eFUSE) programmed by electromigration for 90nm technology will be presented. Both programmed and unprogrammed fuse elements were shown to be stable through extensive reliability evaluations. A qualification methodology is demonstrated to define an optimized reliable electrical fuse programming window by combining fuse resistance measurements, physical analysis, and functional sensing data. This methodology addresses the impact on electrical fuse reliability caused by process variation and device degradation (e.g., NBTI) in the sensing circuit and allows an adequate margin to ensure electrical fuse reliability over the chip lifetime. ©2006 IEEE.