V.P. Kesan, E. Bassous, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
We present the first experimental identification of the diffusion mechanisms of Ge in Si. Using thermal nitridation reactions to create either excess self-interstitials or vacancies, it is established that under equilibrium conditions at 1050°C Ge diffusion takes place by both substitutional- interstitial interchange and vacancy mechanisms, with comparable contributions from each. If previous conjectures that Ge diffusion in Si is similar to Si self-diffusion are correct, our findings support the idea that Si self-diffusion takes place by both interstitial and vacancy mechanisms.
V.P. Kesan, E. Bassous, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
J.C. Tsang, J. Freeouf, et al.
Physical Review B
F. Guarin, Subramanian S. Iyer, et al.
Applied Physics Letters
G.L. Patton, J.H. Comfort, et al.
VLSI Technology 1990