O. Takahashi, S. Dhong, et al.
ISSCC 2000
We present the first experimental identification of the diffusion mechanisms of Ge in Si. Using thermal nitridation reactions to create either excess self-interstitials or vacancies, it is established that under equilibrium conditions at 1050°C Ge diffusion takes place by both substitutional- interstitial interchange and vacancy mechanisms, with comparable contributions from each. If previous conjectures that Ge diffusion in Si is similar to Si self-diffusion are correct, our findings support the idea that Si self-diffusion takes place by both interstitial and vacancy mechanisms.
O. Takahashi, S. Dhong, et al.
ISSCC 2000
Subramanian S. Iyer, C.-Y. Ting, et al.
ECS Meeting 1983
V.P. Kesan, F.K. LeGoues, et al.
Physical Review B
J. Freeouf, J.C. Tsang, et al.
Physical Review Letters