Low-energy proton-induced single-event-upsets in 65 nm node, silicon-on-insulator, latches and memory cells

Abstract

Experimental data are presented showing that low energy (< 2 MeV) proton irradiation can upset exploratory 65 nm node, Silicon-On-Insulator circuits. Alpha particle SER data, modeling and simulation results provide a plausible mechanism. This work suggests that track structures need to be understood and effectively modeled, especially for small, modern devices. © 2007 IEEE.