James R. Schwank, Marty R. Shaneyfelt, et al.
IEEE TNS
A 1 GeV/amu 56Fe ion beam allows for true 90° tilt irradiations of various microelectronic components and reveals relevant upset trends at the GCR flux energy peak. Three SRAMs and an SRAM-based FPGA evaluated at the NASA Space Radiation Effects Laboratory demonstrate that a 90° tilt irradiation yields a unique device response. These tilt angle effects need to be screened for, and if found, pursued with radiation transport simulations to quantify their impact on event rate calculations. © 2010 IEEE.
James R. Schwank, Marty R. Shaneyfelt, et al.
IEEE TNS
Jonathan A. Pellish, Robert A. Reed, et al.
IEEE TNS
Jonathan A. Pellish, Michael A. Xapsos, et al.
RADECS 2009
Martha V. O'Bryan, Kenneth A. LaBel, et al.
REDW/NSREC 2011