Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
The fabrication of integrated complementary metal-oxide-semiconductor devices and circuits that scale into the sub-100nm regime is presented. While the devices are essentially conventional in design, significant innovations have been required to build them. These innovations combine new materials, lithography, etching, and processing technologies. Moreover, theoretical models of novel devices, such as the double gate transistor, suggest that metal-oxide-semiconductor field-effect transistors may be scaled down to gate lengths of 30nm.
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications