R.E. Walkup, R.W. Dreyfus, et al.
CLEO 1983
The lateral scaling in carbon nanotube field effect transistors was analyzed. These devices exhibit markedly different transistor characteristics when switched using gate segments controlling the device interior versus those near the source and the drain. This was due to a change from Schottky-barrier modulation at the contacts to bulk switching.
R.E. Walkup, R.W. Dreyfus, et al.
CLEO 1983
K.L. Lee, D. Boyd, et al.
ESSDERC 2001
J. Appenzeller, J. Knoch, et al.
Device Research Conference 2003
H. Stahl, J. Appenzeller, et al.
Physical Review Letters