R.M. Tromp, M.C. Reuter
Ultramicroscopy
The focused-ion-beam micropatterning was used for the lateral control of self-assembled Ge islands on Si(001). The selective growth was achieved without modifying the initial surface topography at low doses of 6000 Ga+ ions per <100 nm spot. The topographic effects produced by sputtering and redeposition controlled the selective nucleation sites at larger doses.
R.M. Tromp, M.C. Reuter
Ultramicroscopy
S. Kodambaka, J. Tersoff, et al.
SPIE OPTO 2009
J. Falta, M.C. Reuter, et al.
Applied Physics Letters
R. Hull, E.A. Stach, et al.
Physica Status Solidi (A) Applied Research