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Nuclear Inst. and Methods in Physics Research, B
We have used hot electrons emitted into vacuum from biased metal-oxide-semiconductor (MOS) structures to form a direct image of the spatial emission distribution. Hot-electron emission microscopy allows us to investigate the emission characteristics of biased MOS structures and its correlation with morphology, as well as time-dependent prebreakdown phenomena at high spatial resolution(∼20 nm). We show that different oxide structures have very different emission, as well as prebreakdown characteristics. © 1996 The American Physical Society.
J.W.M. Frenken, R.M. Tromp, et al.
Nuclear Inst. and Methods in Physics Research, B
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Applied Physics Letters
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