Ion beam annealing of semiconductors

R.T. Hodgson; J.E.E. Baglin; R. Pal; J.M. Neri; D.A. Hammer

doi:10.1063/1.91819

Applied Physics Letters

Paper

22 Jul 2008

Ion beam annealing of semiconductors

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Abstract

The first use of an intense pulsed ion beam to anneal ion-implanted semiconductors is reported. Helium ion channeling shows that a single 80-ns pulse 200-keV H+ ions at ∼100 A/cm2 produced good crystallinity in silicon implanted with 1014 As/cm2 at 100 keV.

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