Schottky barrier formation by laser irradiation processing

E.S. Yang; C.M. Wu; H.J. Vollmer; T.O. Sedgewick; R.T. Hodgson

doi:10.1063/1.91965

Applied Physics Letters

Paper

23 Jul 2008

Schottky barrier formation by laser irradiation processing

View publication

Abstract

A Schottky barrier is fabricated with a silicon-aluminum-silicon structure by the irradiation of either a pulsed or cw laser. The completed diodes have a large barrier height (1 eV) and good rectifying properties.

Conference paper

Effects of injection induced bandgap narrowing on bipolar transistors operating at low temperatures

Paper

Si-YBaCuO intermixing and reactive patterning technique

Paper

Influence of device structure and growth conditions on the tunneling characteristics of Si/Si_1-xGe_x double barrier structures

Paper

Probing band structure anisotropy in quantum wells via magnetotunneling

View all publications

Abstract

Related

Effects of injection induced bandgap narrowing on bipolar transistors operating at low temperatures

Si-YBaCuO intermixing and reactive patterning technique

Influence of device structure and growth conditions on the tunneling characteristics of Si/Si1-xGex double barrier structures

Probing band structure anisotropy in quantum wells via magnetotunneling

Influence of device structure and growth conditions on the tunneling characteristics of Si/Si_1-xGe_x double barrier structures