E.S. Yang, C.M. Wu, et al.
Journal of Applied Physics
A Schottky barrier is fabricated with a silicon-aluminum-silicon structure by the irradiation of either a pulsed or cw laser. The completed diodes have a large barrier height (1 eV) and good rectifying properties.
E.S. Yang, C.M. Wu, et al.
Journal of Applied Physics
Ulf Gennser, V.P. Kesan, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Q.Y. Ma, E.S. Yang, et al.
Journal of Applied Physics
C.M. Wu, E.S. Yang, et al.
Journal of Applied Physics