Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We study high-mobility, interacting GaAs bilayer hole systems exhibiting counterflow superfluid transport at total filling-factor ν=1. As the density of the two layers is reduced, making the bilayer more interacting, the counterflow Hall resistivity (ρxy) decreases at a given temperature, while the counterflow longitudinal resistivity (ρxx), which is much larger than ρxy, hardly depends on density. On the other hand, a small imbalance in the layer densities can result in significant changes in ρxx at ν=1, while ρxy remains vanishingly small. Our data suggest that the finite ρxx at ν=1 is a result of mobile vortices in the superfluid created by the ubiquitous disorder in this system. © 2005 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Revanth Kodoru, Atanu Saha, et al.
arXiv
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021