Conference paper
High-performance SiGe pMODFETs grown by UHV-CVD
S.J. Koester, R. Hammond, et al.
EDMO 1999
Rapid fluctuations of power supply values, or switching noise, can have a significant effect on VLSI circuit speed. This is shown by comparing circuit simulations with measurements of the critical path delay of a self-resetting SRAM. It is shown that including the measured high frequency noise in the circuit simulation leads to very accurate prediction of circuit speed.
S.J. Koester, R. Hammond, et al.
EDMO 1999
Keith A. Jenkins, R. Puri, et al.
IEEE International SOI Conference 2001
J. Warnock, J.D. Cressler, et al.
IEEE Electron Device Letters
C.T. Chuang, P.F. Lu, et al.
International Journal of Electronics