Petar Jurcevic, Ali Javadi-Abhari, et al.
Quantum Science and Technology
Lateral asymmetric channel doping is applied to 45-nm technology NFET devices. The measured effective draincurrent enhancement over coprocessed symmetric control devices is 10%. Analysis reveals that the dominant physical mechanism, which accounts for two-third of the total enhanced drain current, is an 8% increase in the source-side injection velocity. The remaining one-third is attributed to the decreased drain-induced barrier lowering. This paper concludes with an analysis of the switching characteristics of CMOS inverters composed of an asymmetric NFET and a companion symmetric PFET and shows a 5% improvement in the delay. The improvement is explained in terms of the increased velocity and 30% reduction in drain junction capacitance. © 2009 IEEE.
Petar Jurcevic, Ali Javadi-Abhari, et al.
Quantum Science and Technology
Wilfried Haensch, Edward J. Nowak, et al.
IBM J. Res. Dev
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SISPAD 2006
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IEDM 2005