A. Rüfenacht, P. Chappatte, et al.
Solid-State Electronics
Paper
IcR products of tunnel junctions with depressed order parameter
Abstract
IcRN products of tunnel junctions with depressed order parameters are calculated. It is shown that in contrast to abrupt, classical tunnel junctions, IcRN products of junctions with depressed order parameter are a function of Ic with I cRN(Ic) ≤ πΔ0/2e.
Related
Paper
High-Tc transistors
J. Mannhart
Supercond Sci Technol
H.-M. Christen, J. Mannhart, et al.
Physical Review B
D.G. Schlom, D. Anselmetti, et al.
Journal of Crystal Growth