Post-Si CMOS: III-V n-MOSFETs with high-k gate dielectrics
Yanning Sun, S.J. Koester, et al.
CS MANTECH 2007
By capacitively charging an underdoped ultrathin La2-xSrxCuO4 film with an electric field applied across a gate insulator with a high dielectric constant, relative changes of the areal superfluid density ns□ of unprecedented strength were observed in measurements of the film kinetic inductance. Although ns□ appears to be substantially reduced by disorder, the data provide, for the first time on the same sample, direct compelling evidence for the Uemura relation Tcns□(T=0) in the underdoped regime of copper-oxide superconductors. © 2006 The American Physical Society.
Yanning Sun, S.J. Koester, et al.
CS MANTECH 2007
A. Rüfenacht, P. Chappatte, et al.
Solid-State Electronics
Mattias Vervaele, Bert De Roo, et al.
Advanced Engineering Materials
J.W. Seo, J. Fompeyrine, et al.
Applied Physics Letters