Current challenges in Ge MOS technology
A. Dimoulas, M. Houssa, et al.
ECS Meeting 2006
By capacitively charging an underdoped ultrathin La2-xSrxCuO4 film with an electric field applied across a gate insulator with a high dielectric constant, relative changes of the areal superfluid density ns□ of unprecedented strength were observed in measurements of the film kinetic inductance. Although ns□ appears to be substantially reduced by disorder, the data provide, for the first time on the same sample, direct compelling evidence for the Uemura relation Tcns□(T=0) in the underdoped regime of copper-oxide superconductors. © 2006 The American Physical Society.
A. Dimoulas, M. Houssa, et al.
ECS Meeting 2006
Y. Jaccard, T. Schneider, et al.
Europhysics Letters
J.W. Seo, J. Fompeyrine, et al.
Physical Review B - CMMP
E.J. Williams, A. Daridon, et al.
MRS Fall Meeting 1996