High-performance sub-0.25 μm CMOS technology with multiple thresholds and copper interconnects

Abstract

A sub-0.25 μm technology in manufacturing that is targeted for high-performance CMOS applications is discussed. Aggressive groundrule scaling including SRAM cell size down to 5.4 μm2 is combined with multiple threshold voltage devices and the first technology in the industry to offer copper interconnects. These features result in minimum unloaded inverter delay of 12.7 ps and enable microprocessor frequencies above 480 MHz.