High-performance 0.08 μm CMOS

Abstract

We demonstrate a 0.08 μm CMOS suitable for high-performance (Vdd = 1.8 V) and low-power applications (Vdd < 1.5 V) with the best current drive at a given off-current reported in the literature to date. Excellent short-channel effects were obtained for Leff down to 0.06 μm in the NFET and 0.08 μm in the PFET. Aggressive lateral and vertical dopant engineering allow the VT to be reduced with no degradation in short-channel effects resulting in a 50% improvement in delay at Vdd = 1 V over the regular-VT process.