Reliability Challenges with Materials for Analog Computing
Eduard Cartier, Wanki Kim, et al.
IRPS 2019
High-performance metal-oxide-semiconductor field effect transistors (MOSFETs) on III-V semiconductors have long proven elusive. High-permittivity (high- κ) gate dielectrics may enable their fabrication. We have studied hafnium oxide and aluminum oxide grown on gallium arsenide by atomic layer deposition. As-deposited films are continuous and predominantly amorphous. A native oxide remains intact underneath Hf O2 during growth, while thinning occurs during Al2 O3 deposition. Hydrofluoric acid etching prior to growth minimizes the final interlayer thickness. Thermal treatments at ~600 °C decompose arsenic oxides and remove interfacial oxygen. These observations explain the improved electrical quality and increased gate stack capacitance after thermal treatments. © 2005 American Institute of Physics.
Eduard Cartier, Wanki Kim, et al.
IRPS 2019
Martin M. Frank, Yu Zhu, et al.
ECS Meeting 2014
Martin M. Frank, Safak Sayan, et al.
Materials Science and Engineering: B
Martin D. McDaniel, Agham Posadas, et al.
Journal of Applied Physics