S. Narasimha, P. Chang, et al.
IEDM 2012
Room-temperature carrier transport in Si nanowire (NW) MOSFETs with gate lengths and diameters down to 25 and 8 nm, respectively, is analyzed. It is shown that in Si NWs, holes exhibit channel injection and thermal velocities, as high as the highest obtained for uniaxially strained planar Si-channel electrons, likely due to combination of strain and confinement. © 2012 IEEE.
S. Narasimha, P. Chang, et al.
IEDM 2012
R.W. Gammon, E. Courtens, et al.
Physical Review B
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter