Gas phase chlorination of hydrogen-passivated silicon surfaces

Abstract

The gas phase chlorination of hydrogen-passivated silicon Si(111) and Si(100) surfaces was investigated. The structure and stability of chlorine-terminated Si surfaces were investigated using infrared-absorption spectroscopy. It was found that the chlorination process did not change the surface morphology of the H/Si surfaces and HF-etched Si surfaces. It was also observed that Si(100) surfaces were less stable than Si(111) surfaces, but partial Cl termination was found after 15 min with the appearance of SiO 2 phonon modes.