PaperOn the effective mass and collision time of (100) Si surface electronsF. Fang, A.B. Fowler, et al.Surface Science
PaperCyclotron mass of two-dimensional holes in strained Si/Si0.88Ge0.12/Si heterostructuresS.-H. Song, D.C. Tsui, et al.Solid State Communications
PaperSubstrate bias effects on electron mobility in silicon inversion layers at low temperaturesA.B. FowlerPhysical Review Letters
