Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
A novel technique has been devised to allow the growth of strained Si/SiGe quantum wells (QW's) on Si substrates, while virtually eliminating threading dislocations. The amount of strain in the quantum wells is tuned by ramping the Ge content in a Si/SiGe multilayer buffer. Both n-type and p-type modulation-doped structures have been grown using this technique, with mobilities at 1.4 K as high as 19 000 cm2/V s and 6000 cm2/V s, respectively. The effect of strain on the bandstructure in both cases is investigated. © 1992.
T.N. Morgan
Semiconductor Science and Technology
David B. Mitzi
Journal of Materials Chemistry
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
Revanth Kodoru, Atanu Saha, et al.
arXiv