William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
A novel technique has been devised to allow the growth of strained Si/SiGe quantum wells (QW's) on Si substrates, while virtually eliminating threading dislocations. The amount of strain in the quantum wells is tuned by ramping the Ge content in a Si/SiGe multilayer buffer. Both n-type and p-type modulation-doped structures have been grown using this technique, with mobilities at 1.4 K as high as 19 000 cm2/V s and 6000 cm2/V s, respectively. The effect of strain on the bandstructure in both cases is investigated. © 1992.
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
R.W. Gammon, E. Courtens, et al.
Physical Review B
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids