R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
A novel technique has been devised to allow the growth of strained Si/SiGe quantum wells (QW's) on Si substrates, while virtually eliminating threading dislocations. The amount of strain in the quantum wells is tuned by ramping the Ge content in a Si/SiGe multilayer buffer. Both n-type and p-type modulation-doped structures have been grown using this technique, with mobilities at 1.4 K as high as 19 000 cm2/V s and 6000 cm2/V s, respectively. The effect of strain on the bandstructure in both cases is investigated. © 1992.
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
Julien Autebert, Aditya Kashyap, et al.
Langmuir