David B. Mitzi
Journal of Materials Chemistry
Magneto-transport measurements of the 2D hole system (2DHS) in p-type Si-Si1-xGex heterostructures identify the integer quantum Hall effect (IQHE) at dominantly odd-integer filling factors v and two low-temperature insulating phases (IPs) at v = 1.5 and v ≲ 0.5, with re-entrance to the quantum Hall effect at v = 1. The temperature dependence, current-voltage characteristics, and tilted field and illumination responses of the IP at v = 1.5 indicate that the important physics is associated with an energy degeneracy of adjacent Landau levels of opposite spin, which provides a basis for consideration of an intrinsic, many-body origin.
David B. Mitzi
Journal of Materials Chemistry
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
Ronald Troutman
Synthetic Metals