S. Lombardo, J.H. Stathis, et al.
Physical Review Letters
Ultra-thin oxide reliability has become an important issue in integrated circuit scaling. Present reliability methodology stresses oxides with a low impedance voltage source. This, though, does not represent the stress under circuit configurations, in which transistors are driven by other transistors. A Current Limited Constant Voltage Stress simulates circuit stress well. Limiting the current during the breakdown event reduces the post-breakdown conduction. Limiting the current to a sufficiently low value may prevent device failure, altogether.
S. Lombardo, J.H. Stathis, et al.
Physical Review Letters
D.A. Buchanan, J.H. Stathis, et al.
Applied Physics Letters
R. Rodríguez, R.V. Joshi, et al.
SISPAD 2003
J.H. Stathis
IWGI 2001