Conference paper
Statistics of progressive breakdown in ultra-thin oxides
B.P. Linder, J.H. Stathis
INFOS 2003
Ultra-thin oxide reliability has become an important issue in integrated circuit scaling. Present reliability methodology stresses oxides with a low impedance voltage source. This, though, does not represent the stress under circuit configurations, in which transistors are driven by other transistors. A Current Limited Constant Voltage Stress simulates circuit stress well. Limiting the current during the breakdown event reduces the post-breakdown conduction. Limiting the current to a sufficiently low value may prevent device failure, altogether.
B.P. Linder, J.H. Stathis
INFOS 2003
R. Rodríguez, J.H. Stathis, et al.
INFOS 2003
B. Doris, B.P. Linder, et al.
VLSI-TSA 2005
L. Dori, J.H. Stathis, et al.
Journal of Applied Physics