Conference paperPhysical and predictive models of ultra thin oxide reliability in CMOS devices and circuitsJ.H. StathisIRPS 2001
PaperThe impact of gate-oxide breakdown SRAM stabilityR. Rodríguez, J.H. Stathis, et al.IEEE Electron Device Letters
PaperThe negative bias temperature instability in MOS devices: A reviewJ.H. Stathis, S. ZafarMicroelectronics Reliability
PaperElectrically detected magnetic resonance study of stress-induced leakage current in thin SiO2J.H. StathisApplied Physics Letters