F. Crupi, C. Ciofi, et al.
Applied Physics Letters
We report an investigation of trapped positive charge in as-fabricated plasma-enhanced chemical vapor deposited SiO2 films using electrical and spin resonance techniques. We show that the positive charge results from donor-like "slow" interface states ("anomalous positive charge") rather than trapped holes, and that most (∼95%) of the positive charge is not related to E' centers. The positive charge is similar to that seen in electron-injected thermally grown SiO2, and unlike radiation-induced trapped holes.
F. Crupi, C. Ciofi, et al.
Applied Physics Letters
D. Landheer, Y. Tao, et al.
Journal of Applied Physics
Sufi Zafar, A.C. Callegari, et al.
ECS Meeting 2005
T.T. Chau, T.V. Herak, et al.
IEEE Transactions on Electrical Insulation