PaperEffect of hydrostatic pressure on the current-voltage characteristics of GaN/AlGaN/GaN heterostructure devicesY. Liu, M.Z. Kauser, et al.Journal of Applied Physics
PaperRapid annealing and the anomalous diffusion of ion implanted boron into siliconAlwin E. Michel, W. Rausch, et al.Applied Physics Letters
PaperTransition temperature variations in sodium barium niobate and related compositionsG. Burns, D.F. O'KanePhysics Letters A